S-parameters of W-band single-shunt InGaAs PIN diode SPST Switch
S-parameters of W-band double-shunt InGaAs PIN diode SPST Switch
(a) shows the spectral photocurrent response for InP homojunction, p-InP/
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... GaInP/InP configurations represent an opportunity for the use of NW tandem solar cells, whose efficiency is independent of the growth order of the ...
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Transfer function (Isolation/Insertion Loss) for single-shunt and double-shunt
... p-i-n InP NWs. (a) displays SEM image of our fabricated single solar cell device and (b
Characteristics of membrane devices on InP: (a) directly modulated DFB laser, and (b) EA-DFB laser.
Schematic 2D structure of InP/In 0.53 Ga 0.47 As/InP p-i-n photodiode.
4. Photocurrent against independent power at 1550 nm and different bias voltages.
Measured response spectrum of the reflection-enhanced dual-absorption InP- PIN/GaAs-DBR photodetector (solid line) and the dual-absorption photodetector ...
Schematics of W-band shunt InGaAs PIN diodes switches.
A AlGaAs/GaAs optical waveguide was coupled with InGaAs/InP p-i-n photodiodes by metal
3. Schematic figure of the experimental setup for measuring the responsivity of the waveguide-type PD.
The identical epitaxial structure of p-i-n InP/InGaAsP heterojunction is appropriated for the entire chip.
TAS2557 C3 / D3 pin, Spec is to write the NC, but the EVM line inside is C3: INP / C4: INM, please help confirm the correct connection
2 Refractive indices of InP and In0.53Ga0.47As vs wavelength.
1 Cross-sectional view (not to scale) of a fabricated p-i-n In0.20Ga0.80As photodetector. Note that polyimide is used for passivating the etched mesa ...
5 Demonstration of the effect on the reflected power from a dielectric coating/InP layer/InGaAs layer/InP substrate structure by increasing the InP layer ...
1 Schematic drawing of the cross section of the InP-based type-II quantum well photodiodes heterogeneously integrated on a SOI waveguide circuit.
Schematics of GaInAs/InP p-i-n membrane PD bonded on Si substrate using BCB.
Fig. 2. Membrane optical devices integrated on silicon.
47-GHz InP HBT Photoreceiver with Integrated P-I-N Detector and InP HBT Distributed Amplifier
1 The cross section of an InGaAs PIN photodetector integrated with an SOI waveguide.
(a) Photomicrograph, (b) schematic cross-sectional views of SSC,
... InGaAs/InP PIN photodetector array. Diffused junctions with different window sizes(in width).
SEM Photograph of a fabricated InGaAs/InP PIN Diode
Cross-sectional SCM image of partial of an InGaAs/InP PIN photodetector array.
º-tilted SEM image of the p-i-n InP NWs.
Typical structure of an InGaAs/InP planar single-photon avalanche diode (SPAD).
use Inp.pin to prepare nodes(junctions), links,catchments
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1 (a) Schematics of InAs(Sb) inserts in InAsP nanowires grown on InP (111)B. (b) A close-up look of nanowire array with InAs inserts. The scale bar is 1 µm.
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
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Example structure of high-speed p-i-n photodiode for optical interconnect.
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Fig. 2. (a) Microscope image of the fabricated conventional-waveguide-type PD. (b) SEM image of the cross-sectional view of the GaInAsP waveguide region.
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Receiver module Die-bond / Wire bond PIN-diode array on Al 2 O
Absolute Maximum Ratings (T=25 C):
Optically pumped sample structure and micro-photoluminescence
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Figure 1: Schematic structure and electric field profile of a single-drift flat-profile IMPATT diode.
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(a) PL spectra of InP1−xBix samples with various Bi concentrations and LT InP reference sample at 10.5 K. Red arrows point the theoretical band gap values ...
InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit
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Fig. 1. Concept of PICs based on membrane optical devices.
monolithic widely tunable SGDBR laser
Because when I drag the PIN from library, the port colour is green which can't connect with PIN.
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EPIGAP Optronic GmbH Product Data Sheet PIN Photo Diode Chip .